US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 19 for "Semiconductor structure and method for preparing semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,243, issued on Aug. 19, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for preparing semiconductor structure" was invented by Songmei Shen (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for preparing a semiconductor structure are provided. The method for preparing the semiconductor structure includes operations as follows. A substrate is provided, and a plurality of gate structures are arranged at intervals on the substrate. A sacrificial sidewall with a preset thickness is formed on a sidewall of the gate structure. A first dielectric layer i...