US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 19 for "Method for fabricating semiconductor structure, and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,149, issued on Aug. 19, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating semiconductor structure, and semiconductor structure" was invented by Xuri Jin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a method for fabricating a semiconductor structure, and a semiconductor structure, to solve a problem in related technologies that a support layer is prone to crack, resulting in collapse of capacitor. The method includes: forming a sacrificial layer and a support layer on a substrate, where the support layer includes a first support layer and a second support layer stacked, and t...