US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 19 for "Memory structure and manufacturing method thereof, and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,156, issued on Aug. 19, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory structure and manufacturing method thereof, and semiconductor structure" was invented by Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a memory structure and a manufacturing method thereof, and a semiconductor structure. The semiconductor structure includes an epitaxial structure, a grounding structure, a columnar capacitor structure, a bit line structure, and a word line structure. The grounding structure wraps one end of the epitaxial structure in a first direction; the columnar capacitor struct...