US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 19 for "Bit line spacer structures including air gaps and method for forming the same" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,667, issued on Aug. 19, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Bit line spacer structures including air gaps and method for forming the same" was invented by Daejoong Won (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device includes the following: after sacrificial side walls are formed on the side walls of conductive connection structures, forming an outer side wall material layer on the surfaces of the sacrificial side walls; perforating the outer side wall material layer to form pinholes in the outer side wall material layer which expose the surfaces of the sacrificia...