US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 12 for "Word-line drive circuit, word-line driver and storage device" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,779, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Word-line drive circuit, word-line driver and storage device" was invented by Luguang Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A word-line drive circuit, a word-line driver and a storage device are provided. The word-line drive circuit includes at least two SWDs. Each SWD is connected to an MWL for providing an enable signal and a sub word line. The SWD includes a holding transistor. A first end and a second end of the holding transistor are respectively connected to different sub word lines, and a gate receives a second drive signal. ...