US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 12 for "Signal sampling circuit and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,770, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Signal sampling circuit and semiconductor memory" was invented by Zequn Huang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A signal sampling circuit includes the following. An input sampling circuit samples a first chip select signal and a first command address signal according to a first clock signal to obtain a second chip select signal and a second command address signal. A second command address signal includes an initial command signal. The logical operation circuit performs logical operation on the first clock signal and the second chip s...