ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,659, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Semiconductor structure and method for manufacturing same" was invented by Yexiao Yu (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: providing a substrate; forming a gate trench in the substrate, the gate trench including a first trench and a second trench, the second trench being located above the first trench, communicating with the first trench, and having a width greater than a width of the first trench; and forming a gate word line in the gate trench."
The patent was filed on Jan...