US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 12 for "Semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,651, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and fabrication method thereof" was invented by Semyeong Jang (Hefei, China), Joonsuk Moon (Hefei, China), Deyuan Xiao (Hefei, China) and Jo-Lan Chin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor structure and a fabrication method. The method includes: providing a substrate, where a first trench is formed in the substrate; forming a first dielectric layer and a protective material layer in the first trench, where the first dielectric layer is positioned between the protective material...