ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,542, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Semiconductor device and storage system" was invented by Yanwu Wang (Hefei, China), Huifang Dai (Hefei, China) and Yade Fang (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a storage system are provided. The semiconductor device includes a first printed circuit board and a capacitor structure positioned on the first printed circuit board. The first printed circuit board includes a plurality of memories arranged in sequence along a first direction, and each of the memories has a first power terminal and a first ground ter...