US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 12 for "Semiconductor device and method for manufacturing semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,589, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Weiping Bai (Hefei, China) and Jie Bai (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method for manufacturing a semiconductor device are provided. The semiconductor device includes a substrate, and a plurality of storage structures stacked on the substrate. Each of the plurality of storage structures includes: a first dielectric layer; at least one channel layer arranged in ...