US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 12 for "Method for manufacturing shallow trench isolation structure, shallow trench isolation structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,972, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing shallow trench isolation structure, shallow trench isolation structure and semiconductor structure" was invented by Meng-Cheng Chen (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a shallow trench isolation structure includes: providing a substrate and forming multiple first trenches in the substrate, in which a cross-sectional width of each first trench increases downward along a vertical direction; forming a continuous first isolation layer on a top of the substrate and inner sides of the multi...