US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 12 for "Method for forming active area and method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,932, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming active area and method for forming semiconductor structure" was invented by Yang Liu (Hefei, China), Wei Wan (Hefei, China) and Pan Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming the active area includes the following operations. A semiconductor substrate is provided. A first mask layer and a second mask layer are sequentially formed on a surface of the semiconductor substrate, in which the second mask layer has an initial pattern for forming the active area. A sacrificial layer covering the second mas...