US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 12 for "Memory, semiconductor structure, and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,587, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory, semiconductor structure, and manufacturing method thereof" was invented by Runping Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a memory, a semiconductor structure, and a manufacturing method thereof. The manufacturing method includes: providing a substrate, where the substrate includes bit line structures, a first isolation layer covering sidewalls of the bit line structures and a second isolation layer covering a surface of the first isolation layer; removing the second isolation layer on a top of the first isolation ...