US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 12 for "Latency adjustment method, memory chip architecture, and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,769, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Latency adjustment method, memory chip architecture, and semiconductor memory" was invented by Hongguang Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A latency adjustment method, a memory chip architecture, and a semiconductor memory are provided. The method includes: measuring a first latency of a first signal path; performing decoding based on the first latency to obtain a number of latency cycles, where the number of latency cycles represents a ratio of the first latency to a clock cycle; and controlling a second latency of a second si...