US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 12 for "Critical dimension measurement mark structure" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,386,269, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Critical dimension measurement mark structure" was invented by Wei Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A critical dimension measurement mark structure includes a target area and a first pattern area located in the target area. The first pattern area and the target area are located on different horizontal planes. The first pattern area includes a first measurement part and a second measurement part which have different line widths, and the first measurement part and the second measurement part form an asymmetric open continuous patte...