ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,641, issued on April 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Semiconductor structure, memory and method for operating memory" was invented by Yanzhe Tang (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor structure, a memory and a method for operating the memory. The semiconductor structure includes: a substrate; a first gate structure and a second gate structure that are located on a surface of the substrate and have a same thickness smaller than a preset thickness; and a first doped area and a second doped area that are located in the substrate and are respectively located on tw...