US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 29 for "Semiconductor redistribution structure with integrated test pad and method for preparing the same" (Chinese Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,759, issued on April 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor redistribution structure with integrated test pad and method for preparing the same" was invented by Chih-Cheng Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate, a conductive pattern layer, a support layer and a re-distribution layer. The conductive pattern layer is arranged on the substrate. The support layer covers the conductive pattern layer and is provided with a via hole. The re-distribution layer is arranged on the support, and the re-distribution layer includes a test pad at ...