US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 29 for "Semiconductor device including air gap structure above word line" (Chinese Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,882, issued on April 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device including air gap structure above word line" was invented by Luguang Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure disclose a semiconductor device and a method manufacturing thereof. The semiconductor device includes a substrate as well as a first groove and a second groove located in the substrate, in which the second groove is formed by etching the substrate downwards from part of a bottom surface of the first groove, and a sidewall of the second groove retracts inward by a preset length ...