US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 22 for "Word line driver and memory device" (Chinese Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,347, issued on April 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Word line driver and memory device" was invented by Luguang Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A word line driver includes a PMOS area, a NMOS area, first gates, and second gates. The PMOS area includes first active areas extending along a first direction. The first active area includes a first channel area, a first source area and a first drain area. The NMOS area includes second active areas. The second active area includes a second channel area, a second source area, a second drain area, a third channel area, a third source ar...