US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 22 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,800, issued on April 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Gongyi Wu (Hefei, China), Yong Lu (Hefei, China) and Longyang Chen (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a substrate, a trench and a word line. The substrate includes an isolation structure and an active area. The active area includes irons of a first type. The trench is arranged in the active area, an inner sur...