US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 22 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,802, issued on April 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Zhaopei Cui (Hefei, China) and Bingyu Zhu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method for manufacturing a semiconductor structure, the method includes: a substrate is provided; a bit line array is formed on an upper surface of the substrate, the bit line array includes several bit lines arranged at intervals, the bit lines are connected through at least one support pattern, and the at least one support patter...