US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 22 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,801, issued on April 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Sen Li (Hefei, China), Jun Xia (Hefei, China), Kangshu Zhan (Hefei, China), Tao Liu (Hefei, China), Qiang Wan (Hefei, China) and Penghui Xu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a bit line located on the substrate; and a support layer located on the substrate, wherein t...