US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 22 for "Memory, semiconductor structure and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,799, issued on April 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory, semiconductor structure and method for forming same" was invented by Jingwen Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to the technical field of semiconductors, and to a memory, a semiconductor structure and a method for same. The method includes: providing a substrate, the substrate including a plurality of conductive contact plugs in array distribution and insulation layers separating the conductive contact plugs; and forming a plurality of capacitive layers stacked and distributed in a direction perpendic...