US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 22 for "Forming method for semiconductor structure and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,519, issued on April 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Forming method for semiconductor structure and semiconductor structure" was invented by Chuxian Liao (Hefei, China), Yuhan Zhu (Hefei, China) and Zhan Ying (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A forming method for a semiconductor structure and the semiconductor structure are provided. The forming method of the semiconductor structure includes: providing a substrate, wherein separate bit line structures are formed on the substrate; forming a first sacrificial layer on a sidewall of a bit line structure; forming first dielectric layer fil...