US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 22 for "Data transmission circuit and memory device" (Chinese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,339, issued on April 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Data transmission circuit and memory device" was invented by Xianjun Wu (Hefei, China), Weibing Shang (Hefei, China) and Xiaoqing Shi (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed data transmission circuit and a memory include a sense amplifier circuit, a first sub-discharge path, a second sub-discharge path, and a discharge adjustment unit. The sense amplifier circuit generate amplified signals based on two terminals. The first sub-discharge path, in the read state, discharges at the first terminal to the discharge terminal based ...