US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 15 for "Semiconductor structure and method for forming semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,107, issued on April 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for forming semiconductor structure" was invented by Kai Cao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming a semiconductor structure are provided. The method for forming the semiconductor structure includes: providing a base; forming a first dielectric layer on the base; then forming a plurality of first mask patterns each having zigzag shape on the first dielectric layer, in which the first mask patterns extend in a first direction; forming a plurality of seco...