US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 15 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,440, issued on April 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Xiaoguang Wang (Hefei, China), Dinggui Zeng (Hefei, China), Huihui Li (Hefei, China) and Jiefang Deng (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor structure and a manufacturing method thereof, including: a substrate; a plurality of transistors, arranged based on a first preset pattern; a plurality of transistor contact structures, corresponding to the transistors, the bottom portions of the transistor contact structures ar...