US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 15 for "Method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,113, issued on April 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing semiconductor structure" was invented by Zhaohui Wang (Hefei, China), Wentao Xu (Hefei, China) and Qiao Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present invention provide a method for manufacturing a semiconductor structure, which includes: a base is provided and a stack layer is formed on the base, wherein the stack layer includes at least a first sacrificial layer, and a material of the first sacrificial layer includes an amorphous elemental semiconductor material; second hard mask patterns a...