US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 15 for "Manufacturing method of semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,137, issued on April 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Manufacturing method of semiconductor structure and semiconductor structure" was invented by Zhugen Chu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a manufacturing method of a semiconductor structure, and a semiconductor structure. The manufacturing method of a semiconductor structure includes: providing a substrate, where a functional structure layer is formed on a surface of the substrate, and particles are provided on the surface of the functional structure layer; forming a first dielectric layer on the surfa...