US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 15 for "Anti-fuse cell structure, anti-fuse array, operation method for anti-fuse array, and memory" (Chinese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,981, issued on April 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Anti-fuse cell structure, anti-fuse array, operation method for anti-fuse array, and memory" was invented by Chuangming Hou (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An anti-fuse cell structure includes: a first anti-fuse transistor having a first end and a second end; a first selection transistor having a first end and a second end, the first end of the first selection transistor being electrically connected to the second end of the first anti-fuse transistor; and a Blow Enable (BE) line electrically connected to a first end of the first an...