US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, INV on Feb. 18 for "Through silicon via detection circuit and method" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,228,619, issued on Feb. 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES, INV (Hefei, China).

"Through silicon via detection circuit and method" was invented by Weijie Cheng (Hefei, China) and Onegyun Na (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit for through silicon via (TSV) detection includes a TSV to be tested, an equivalent adjustable resistor and a reverse output circuit. A first terminal of the TSV to be tested is connected to a second terminal of the equivalent adjustable resistor, and a second terminal of the TSV to be tested is grounded. An input terminal of the reverse output circuit is connected to the first termin...