US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGY on Nov. 25 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,760, issued on Nov. 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGY Co. LTD. (Beijing).

"Semiconductor structure and manufacturing method thereof" was invented by Dong Xue (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure includes an interconnecting line layer, wherein the interconnecting line layer includes a first region and a second region, and the first region includes a first alignment mark th...