US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGIES on Dec. 30 for "Method of manufacturing capacitor, capacitor, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,879, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGIES Co. LTD. (Beijing).

"Method of manufacturing capacitor, capacitor, and memory" was invented by Mengmeng Yang (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a capacitor, a capacitor, and a memory, and relates to the technical field of semiconductors. The method of manufacturing a capacitor includes: providing a substrate; forming a first electrode on the substrate, the first electrode extending in a first directi...