US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Sept. 23 for "Semiconductor structure including a plurality of semicondcutor pillars and bit line isolation trenches and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,256, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Semiconductor structure including a plurality of semicondcutor pillars and bit line isolation trenches and method for forming same" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Yunsong Qiu (Hefei, China) and Minmin Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes: providing a semiconductor substrate including a plurality of first semiconductor pillars and bit line isolation trenches arranged at inte...