US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Sept. 16 for "Semiconductor structure, manufacturing method therefor and memory" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,058, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Semiconductor structure, manufacturing method therefor and memory" was invented by Xiaoguang Wang (Hefei, China), Dinggui Zeng (Hefei, China), Huihui Li (Hefei, China) and Kanyu Cao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure, a manufacturing method therefor and a memory are provided. The semiconductor structure may at least include: a plurality of aligned transistors, in which the transistors share a same source plate, channels of the transistors are lo...