US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Oct. 14 for "Method for forming semiconductor device and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,213, issued on Oct. 14, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Method for forming semiconductor device and semiconductor device" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China) and Weiping Bai (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device includes the following operations. A stacked structure is provided, which includes a substrate, and sacrificial layers and semiconductor layers alternately stacked on surface of the substrate. Multiple first grooves and semiconductor pillars ex...