US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Nov. 11 for "Semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,314, issued on Nov. 11, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Semiconductor structure and fabrication method thereof" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a fabrication method thereof, which relate to the field of semiconductor technology. The method for fabricating a semiconductor structure includes: providing a substrate; forming a plurality of active pillars arranged in an array in the substrate; ...