US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on May 27 for "Method for manufacturing semiconductor device, semiconductor device, and stack device" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,472, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Method for manufacturing semiconductor device, semiconductor device, and stack device" was invented by Deyuan Xiao (Hefei, China), Yong Yu (Hefei, China) and Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes the following operations. A substrate is provided. Bit lines extending in a first direction are formed on the substrate. A first dielectric layer is formed on the bit lines. The first dielectric layer is etched fr...