US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, Beijing Superstring Academy of Memory Technology on May 20 for "Semiconductor structure and method for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,309,997, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and Beijing Superstring Academy of Memory Technology (Beijing).

"Semiconductor structure and method for fabricating same" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Weiping Bai (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a fabrication method thereof. The fabrication method includes: providing a substrate including a plurality of semiconductor layers arranged at intervals and an isolation layer positioned between adjacent two of the plura...