US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on May 20 for "Method for manufacturing semiconductor structure, semiconductor structure, and semiconductor memory" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,247, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Method for manufacturing semiconductor structure, semiconductor structure, and semiconductor memory" was invented by Kanyu Cao (Hefei, China), Xiaoguang Wang (Hefei, China), Huihui Li (Hefei, China), Dinggui Zeng (Hefei, China) and Jiefang Deng (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure, a semiconductor structure and a semiconductor memory are provided. The method includes: providing a substrate; forming an MTJ structure and a fi...