US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on March 25 for "Manufacturing method of semiconductor structure and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,523, issued on March 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Manufacturing method of semiconductor structure and semiconductor structure" was invented by Deyuan Xiao (Hefei, China), Yong Yu (Hefei, China) and Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure. The manufacturing method of a semiconductor structure includes: providing a substrate; forming a plurality of silicon pillars on the substrate, where the silicon pi...