US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on June 24 for "Method of manufacturing magnetic random access memory and magnetic random access memory" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,729, issued on June 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Method of manufacturing magnetic random access memory and magnetic random access memory" was invented by Xiaoguang Wang (Hefei, China), Huihui Li (Hefei, China) and Xianqin Hu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a method of manufacturing a magnetic random access memory (MRAM) and a MRAM. The method includes: preparing a bottom electrode through hole, a bottom electrode, a magnetic tunnel junction (MTJ), a top electrode, and an i...