US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on June 17 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,169, issued on June 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Semiconductor structure and manufacturing method thereof" was invented by Guangsu Shao (Hefei, China), Weiping Bai (Hefei, China), Deyuan Xiao (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof, relates to the technical field of semiconductors. The manufacturing method of the semiconductor structure includes: providing a substrate, a plurality of spaced first trenche...