US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on July 8 for "Memory device and preparing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,632, issued on July 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Memory device and preparing method thereof" was invented by Xiaoguang Wang (Hefei, China), Dinggui Zeng (Hefei, China), Huihui Li (Hefei, China) and Kanyu Cao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application relates to a memory device and a preparing method thereof. The memory device includes: a substrate, and a plurality of memory cells disposed in an array on the substrate. Memory cells in adjacent rows are staggered in a row direction, and a distance between two...