US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on July 22 for "Semiconductor device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,311, issued on July 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Semiconductor device and manufacturing method thereof" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method thereof are provided. The method includes: forming a plurality of first trenches extending in a first direction on the substrate; forming a plurality of second trenches extending in a second direction on the substrate; forming a first isolation laye...