US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on July 15 for "Manufacturing method of semiconductor structure and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,889, issued on July 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Manufacturing method of semiconductor structure and semiconductor structure" was invented by Deyuan Xiao (Hefei, China), Yong Yu (Hefei, China) and Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure. The manufacturing method of a semiconductor structure includes: providing a substrate; forming an silicon pillar on the substrate; pre-processing the silicon pillar, ...