US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on July 1 for "Semiconductor structure and method for manufacturing same, and semiconductor memory" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,601, issued on July 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Semiconductor structure and method for manufacturing same, and semiconductor memory" was invented by Xiaoguang Wang (Hefei, China), Huihui Li (Hefei, China) and Xianqin Hu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a Magnetic Random Access Memory (MRAM) cell, including a bottom electrode, a Magnetic Tunnel Junction (MTJ) stack and a top electrode; an insulating layer covering a sidewall partially and a top surface of the MRAM cell; a first dielect...