US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Jan. 13 for "Semiconductor structure with a high depth-width ratio capacitor and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,981, issued on Jan. 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Semiconductor structure with a high depth-width ratio capacitor and manufacturing method thereof" was invented by Kang You (Hefei, China) and Jie Bai (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: forming a capacitor on a substrate, where a first support layer is provided between parts of the first electrodes in the capacitor away from the substrate; removin...