US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Feb. 10 for "Manufacturing method of semiconductor structure and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,311, issued on Feb. 10, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Manufacturing method of semiconductor structure and semiconductor structure" was invented by Deyuan Xiao (Hefei, China), Yong Yu (Hefei, China) and Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure. The manufacturing method of a semiconductor structure includes: providing a substrate; forming a plurality of active pillars arranged in an array on the substrate, wh...