US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Aug. 26 for "Geometric semiconductor memory structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,957, issued on Aug. 26, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Geometric semiconductor memory structure and manufacturing method thereof" was invented by Xiaoguang Wang (Hefei, China), Dinggui Zeng (Hefei, China), Huihui Li (Hefei, China), Jiefang Deng (Hefei, China) and Kanyu Cao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, having a first surface; a plurality of memory cells, located on the first su...